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C16LF M65762E GT23MCXE WR04XXXX 6N60S XF200 02070 GRM188R6
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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
DESCRIPTION With TO-126 package Complement to type 2SD600/K High breakdown voltage VCEO:-100/-120V High current: -1A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications
PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL

PARAMETER 2SB631
VCBO
ANG INCH
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak
SEM E
OND IC
CONDITIONS
TOR UC
VALUE -100 V -120 -100 UNIT
Open emitter
2SB631K 2SB631 Open base 2SB631K
VCEO
V -120
VEBO IC ICM
Open collector
-5 -1 -2
V A A
Ta=25ae PD Total power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature
1 W 8 150 -55~150 ae ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER 2SB631 IC=-1mA; RBE= 2SB631K 2SB631 IC=-10|I 2SB631K IE=-10|I A ;IC=0 A ;IE=0 CONDITIONS
2SB631 2SB631K
SYMBOL
MIN -100
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
V -120 -100 V -120 -5 -0.4 -1.2 -1 -1 60 20 |I |I V V V A A
V(BR)CBO
Collector-base breakdown voltage
V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain
IC=-0.5A ;IB=-50mA IC=-0.5A ;IB=-50mA VCB=-50V; IE=0 VEB=-4V; IC=0 IC=-50mA ; VCE=-5V IC=-0.5A ; VCE=-5V
Fall time

Transition frequency
Collector output capacitance
Switching times tf toff tstg
HAN INC
SEM GE
IC=-50mA ; VCE=-10V f=1MHz ; VCB=-10V
OND IC
TOR UC
320 110 30 0.08
MHz pF
|I |I |I
s s s
Turn-off time Storage time
IC=-500mA ; VCE=-12V IB1=-IB2=-50mA
0.10 0.60
hFE-1 Classifications D 60-120 E 100-200 F 160-320
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB631 2SB631K
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB631 2SB631K
SEM GE
HAN INC
OND IC
TOR UC
4


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